Anisotropic microstructure of hydrothermally-grown non-polar a-plane ZnO on a-plane GaN filmKWANG HYEON BAIK; HYONWOONG KIM; SOOHWAN JANG et al.Thin solid films. 2014, Vol 569, pp 1-5, issn 0040-6090, 5 p.Article

Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layerHOOYOUNG SONG; SUH, Jooyoung; EUN KYU KIM et al.Journal of crystal growth. 2010, Vol 312, Num 21, pp 3122-3126, issn 0022-0248, 5 p.Article

Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVDSON, Ji-Su; KWANG HYEON BAIK; YONG GON SEO et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 98-102, issn 0022-0248, 5 p.Conference Paper

Structural and electrical anisotropies of Si-doped a-plane (11―20) GaN films with different SiN_x interlayersJI HOON KIM; HWANG, Sung-Min; YONG GON SEO et al.Semiconductor science and technology. 2013, Vol 28, Num 8, issn 0268-1242, 085007.1-085007.8Article

Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substratesSON, Ji-Su; HONDA, Yoshio; YAMAGUCHI, Masahito et al.Thin solid films. 2013, Vol 546, pp 108-113, issn 0040-6090, 6 p.Conference Paper

Crystalline dependence of optical and interfacial properties of InGaN/GaN quantum wells on nonpolar a-plane GaN/r-sapphireLEE, Sung-Nam; KIM, Jihoon; KIM, Hyunsoo et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 19-22, issn 0022-0248, 4 p.Conference Paper

Growth of p-CdTe thin films on n-GaN/sapphireJUNG, Younghun; CHUN, Seunju; KIM, Donghwan et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 69-72, issn 0022-0248, 4 p.Conference Paper

Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substratesKIM, Byung-Jae; KIM, Hong-Yeol; KIM, Jihyun et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 205-207, issn 0022-0248, 3 p.Conference Paper

Photo-enhanced chemical etched GaN LED on silicon substrateKIM, Hong-Yeol; MASTRO, Michael A; HITE, Jennifer et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 58-61, issn 0022-0248, 4 p.Conference Paper

Changes in efficiency of a solar cell according to various surface-etching shapes of silicon substrateMIN GU KANG; TARK, S; JEONG CHUL LEE et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 14-18, issn 0022-0248, 5 p.Conference Paper

Comparison of metal-organic decomposed (MOD) cerium oxide (CeO₂) gate deposited on GaN and SiC substratesQUAH, H. J; LIM, W. F; CHEONG, K. Y et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 2-8, issn 0022-0248, 7 p.Conference Paper

Diffusion of chromium in sapphire: The effects of electron beam irradiationAHN, Yong-Kil; SEO, Jin-Gyo; PARK, Jong-Wan et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 45-49, issn 0022-0248, 5 p.Conference Paper

Effect of nitrogen flow ratio on the structural and optical properties of aluminum nitride thin filmsCHO, Shinho.Journal of crystal growth. 2011, Vol 326, Num 1, pp 179-182, issn 0022-0248, 4 p.Conference Paper

Electrical properties of top-gate oxide thin-film transistors with double-channel layersCHEONG, Woo-Seok; SUNG MOOK CHUNG; SHIN, Jae-Hun et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 186-190, issn 0022-0248, 5 p.Conference Paper

Low-temperature soluble InZnO thin film transistors by microwave annealingSONG, Keunkyu; CHANG YOUNG KOO; JUN, Taehwan et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 23-27, issn 0022-0248, 5 p.Conference Paper

Strongly-enhanced near-band-edge photoluminescence of Nb-implanted ZnO filmsCHANG OH KIM; DONG HEE SHIN; CHOI, Suk-Ho et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 42-44, issn 0022-0248, 3 p.Conference Paper

The crossover of preferred orientation in heteroepitaxial ZnO/MgO(0 0 1) filmsSEO, S. H; KANG, H. C.Journal of crystal growth. 2011, Vol 326, Num 1, pp 166-170, issn 0022-0248, 5 p.Conference Paper

Annealing effect on conductivity behavior of Li-doped ZnO thin film and its application as ZnO-based homojunction deviceTSAI, Shu-Yi; HON, Min-Hsiung; LU, Yang-Ming et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 85-89, issn 0022-0248, 5 p.Conference Paper

Luminous properties of Sr_1-xZn_xSe:Eu²⁺ phosphors for LEDs applicationHONG JEONG YU; CHUNG, Wonkeun; SUN HEE PARK et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 77-80, issn 0022-0248, 4 p.Conference Paper

Spontaneous formation of GaN nanostructures by molecular beam epitaxyKESARIA, Manoj; SHETTY, Satish; SHIVAPRASAD, S. M et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 191-194, issn 0022-0248, 4 p.Conference Paper

Application of electrolytic in-process dressing (ELID) grinding and chemical mechanical polishing (CMP) process for emerging hard-brittle materials used in light-emitting diodesLEE, Hyunseop; KASUGA, Hiroshi; OHMORI, Hitoshi et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 140-146, issn 0022-0248, 7 p.Conference Paper

Effect of substitution of nitrogen ions to red-emitting Sr₃B₂O_6-3/2xN_x:Eu²⁺ oxy-nitride phosphor for the application to white LEDSANG HOON JUNG; DONG SEOK KANG; DUK YOUNG JEON et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 116-119, issn 0022-0248, 4 p.Conference Paper

Improved sorption characteristics of NH₃ molecules on the solution-processed graphene sheetsKO, Geunwoo; JUNG, Younghun; LEE, Kwan-Young et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 208-211, issn 0022-0248, 4 p.Conference Paper

Influence of Al₂O₃ additions on the crystallization mechanism and properties of diopside/anorthite hybrid glass-ceramics for LED packaging materialsMINA KANG; KANG, Seunggu.Journal of crystal growth. 2011, Vol 326, Num 1, pp 124-127, issn 0022-0248, 4 p.Conference Paper

Study on photoluminescence of GaN-based UV-LEDs with refractive index gradient polymeric nanopatternsPARK, Manshik; YU, Guiduk; SHIN, Kyusoon et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 28-32, issn 0022-0248, 5 p.Conference Paper